1. Post Name: Research-Associate (RA): Field effect transistors, Resistive memory devices and related Nano-electronic devices 2. No. of Post: 01 3. Minimum Qualifications: The position requires (a) a Ph.D. degree in Physics (Experimental Condensed Matter Physics) from a recognized University or Institute. The candidate should have experience in fabrication of Field effect transistor, resistive memory devices, semiconductor device fabrication and thin film deposition techniques etc., or synthesis of 2D-materials, synthesis of organic/inorganic perovskites. (b) Minimum average marks of 55% in B.Sc./B.Tech. and M.Sc./M. Tech./M.S. degree. 4. Desirable qualifications/ Experience: In addition to the minimum qualifications, candidates with experience in XRD, FESEM, PL, TEM characterizations, optical and electrical characterization of thin films, and nano-electronic device fabrication techniques/tools will be highly preferred. 5. Duration: Initial appointment will be done for six months, which subjected for extension up to one year or more based on the candidate performance review. 6. Candidates who have submitted their Ph.D. thesis and are awaiting award of the same may also apply subject to receiving their Ph.D. degree. Such candidates are eligible to draw fellowship at par with RA only after their Ph.D. degree. 7. Emoluments: As per rules of the Association. Age: 34 years, Age relaxation is applicable as per Govt. rule.
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